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| inchange semiconductor product specification silicon npn power transistors 2SC3762 description ? with to-3pml package ? high speed switching ? high current capability applications ? for use in high speed and power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a p c collector dissipation t c =25 ?? 65 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3762 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 150 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =10a ;i b =1a 0.6 v v besat base-emitter saturation voltage i c =10a ;i b =1a 1.5 v i cbo collector cut-off current v cb =100v ;i e =0 10 | a i ebo emitter cut-off current v eb =4v; i c =0 10 | a h fe dc current gain i c =5a ; v ce =5v 30 120 inchange semiconductor product specification 3 silicon npn power transistors 2SC3762 package outline fig.2 outline dimensions |
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